23 October 1997 84-GHz source generated from a mode-locked semiconductor-laser-pumped HEMT
Author Affiliations +
Abstract
The generation of 84 GHz radiation was demonstrated using a mode-locked semiconductor laser (MLSL) pumped heterojunction bipolar transistor (HBT). The passively mode-locked MLSL was biased appropriately utilizing two diode laser drivers (current sources). Mode-locked behavior was achieved in a colliding pulse mode, resulting in a pulse repetition rate frequency of approximately equals 84 GHz. The mode-locked behavior was confirmed by utilizing both an interferometer-based correlation measurement and an optical spectrum analyzer. The MLSLO was then used to pump an HBT that was specially designed for optical pumping (a 10 mm X 10 mm window was fabricated in the HBT), allowing efficient optical excitation of the device. HBT-radiated MMW signals as high as 20 dB (above the noise floor) were achieved at approximately equals 84 GHz.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kalin Spariosu, Kalin Spariosu, Vladimir A. Manasson, Vladimir A. Manasson, Lev S. Sadovnik, Lev S. Sadovnik, Robert M. Mino, Robert M. Mino, Dipen Bhattacharya, Dipen Bhattacharya, Mohammed Ershad Ali, Mohammed Ershad Ali, Harold R. Fetterman, Harold R. Fetterman, } "84-GHz source generated from a mode-locked semiconductor-laser-pumped HEMT", Proc. SPIE 3160, Optical Technology for Microwave Applications VIII, (23 October 1997); doi: 10.1117/12.283936; https://doi.org/10.1117/12.283936
PROCEEDINGS
9 PAGES


SHARE
Back to Top