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2 August 1982 Visible And Infrared Waveguiding In Proton Implanted N-Type GaP
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Proceedings Volume 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits; (1982) https://doi.org/10.1117/12.933092
Event: Integrated Optics and Millimeter and Microwave Integrated Circuits, 1981, Huntsville, United States
Abstract
Free-carrier compensation by ion implantation is a potentially important processing technique in forming optical waveguides for multiplexing applications. This process leads to a cutoff condition for waveguiding that is wavelength independent. Gallium phosphide is an attractive semiconductor material for such multiplexing since it is transparent from the visible out into the far infrared. In order to better establish these possibilities, experiments have been performed to help clarify the influence of various implantation parameters on the carrier compensation process and to relate the resulting optical effects to these electronic changes. Sulfur doped,n-type, single crystal GaP wafers were implanted with 300 keV protons at fluence levels up to 1016 ions/cm2 . Initial carrier concentration was approximately 18 18/cm3 and wafer temperature was maintained at 350°, 25° or -140°C during implantation. Capacitance-voltage measurements were made on each implanted wafer to establish whether a compensated layer had been formed and, if so, to determine its thickness. The implanted wafers were then tested for waveguiding at visible and infrared wavelengths. Optical waveguiding was achieved at 0.6328 microns and at 1.15 microns using HeNe lasers and at 10.6 microns with a CO2 laser.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Zavada, H. A. Jenkinson, T. J. Gavanis, R. G. Hunsperger, and M. A. Mentzer "Visible And Infrared Waveguiding In Proton Implanted N-Type GaP", Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); https://doi.org/10.1117/12.933092
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