20 February 1998 Crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300673
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Plastic flows of a large lattice-mismatch InSb epilayer on GaAs substrate grown by metalorganic chemical vapor deposition (MOCVD) were first observed by scanning electron acoustic microscopy (SEAM), and crystalline state of the buried subsurfaces was discussed. From the SEAM images in two different positions a macroscopical heterogenous distribution of large compression stress fields was studied. It was a very important result to observe and study the plastic flows by SEAM uniquely imaging mechanism.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuwei Li, Yongqiang Ning, Tianming Zhou, Yixin Jin, BaoLin Zhang, Hong Jiang, Yuan Tian, Guang Yuan, Fuming Jiang, Qingrui Yin, Bingyang Zhang, "Crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300673; https://doi.org/10.1117/12.300673
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