20 February 1998 Diamond film improvement on WC-Co substrate by sputtering interface
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300665
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
To enhance the adhesion of diamond film on WC-Co substrate, interface of TiC and SiC by sputtering technique were introduced between them. The film structure and surface morphology have been checked by x-ray diffraction, Raman spectroscopy and SEM. The adhesion between both coating and substrate have been evaluated by cutting test. In addition, the vertical tensile test has been carried out to measure the adhesion strength, which indicated that the introduce of the interface layer played important effect for improvement of the film adhesion strength.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xianchang He, Hesheng Shen, Zhiming Zhang, Shenghua Li, "Diamond film improvement on WC-Co substrate by sputtering interface", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300665; https://doi.org/10.1117/12.300665
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