20 February 1998 Effects of processing conditions on PbGeTe film performance
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300721
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Characters of PbGeTe single layer is likely affected by various factors. The adhesion of PbGeTe single layer and PbGeTe/ZnS multilayer deposited on Si substrate by PVD method is investigated by means of x-ray diffraction. The correlation of layer growing rate and the preferred orientation of Si wafer is studied by the grind angle to measure the thickness method. The particle structure of films on various surface situations is studied by the image analysis. It has been noticed, that the adhesion of PbGeTe single layer is stronger in strength than that of the PbTe single layer, which shows little correlation with the preferred orientation of the substrate. The adhesive strength of the films can be improved by inserting thin layer of Ge or oxide layer. We have found that the layer growing rate varies with the preferred orientation of the substrate, we have also noticed that the particle structure of the films can be affected by the roughness of the substrate and the polishing method. Finally, the refractive index of Pb1-xGexTe(x equals 0.08) single layer was calculated.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Su-ying Zhang, Su-ying Zhang, Chiping Cheng, Chiping Cheng, Jiehua Ling, Jiehua Ling, Bin Fan, Bin Fan, Ziying Zou, Ziying Zou, Zhiyun Wang, Zhiyun Wang, Jiajian Zhang, Jiajian Zhang, Tian-Shen Shi, Tian-Shen Shi, Ge-ya Wang, Ge-ya Wang, } "Effects of processing conditions on PbGeTe film performance", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300721; https://doi.org/10.1117/12.300721
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT

Wafer thinning for high-density through-wafer interconnects
Proceedings of SPIE (January 15 2003)
Elastic Lightscattering Measurements Of Si-Surfaces
Proceedings of SPIE (March 21 1989)
Curved Silicon Substrates For Multilayer Structures
Proceedings of SPIE (August 12 1986)
Fusion-bonded multilayered SOI for MEMS applications
Proceedings of SPIE (April 24 2003)
Processing study of next-generation substrate
Proceedings of SPIE (November 13 2002)
Comparison of particulate verification techniques study
Proceedings of SPIE (September 07 2006)

Back to Top