20 February 1998 General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300660
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shanqing Jiao, Shanqing Jiao, Guangzuo Jiang, Guangzuo Jiang, Shujuan Wang, Shujuan Wang, Benli Yang, Benli Yang, } "General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300660; https://doi.org/10.1117/12.300660
PROCEEDINGS
5 PAGES


SHARE
Back to Top