20 February 1998 General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300660
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shanqing Jiao, Shanqing Jiao, Guangzuo Jiang, Guangzuo Jiang, Shujuan Wang, Shujuan Wang, Benli Yang, Benli Yang, "General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300660; https://doi.org/10.1117/12.300660
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