20 February 1998 Impurity process in ZnCdSe/ZnSe multiple quantum wells
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300718
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
At high excitation intensity the photoluminescence (PL) spectra of ZnCdSe/ZnSe multiple quantum wells were studied, which showed strong excitonic emission and a broad emission band at low energy side. The dependence of the broad emission band on excitation intensity shoed obviously that the broad emission band is related to impurity. In time resolved luminescence spectra, with increasing the delay times (ns), the broad emission band shifts to low energy side and full width at half maximum decreased, which showed the typical characteristic of donor-acceptor pairs (DAP) emission. And then, the reason that the excitonic emission peak and the DAP band decay with same speed was discussed and it was attributed to the free carriers relax effect.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guangyou Yu, Guangyou Yu, Xiwu Fan, Xiwu Fan, Jiying Zhang, Jiying Zhang, Baojun Yang, Baojun Yang, Zhuhong Zheng, Zhuhong Zheng, Xiaowei Zhao, Xiaowei Zhao, Dezheng Shen, Dezheng Shen, Youming Lu, Youming Lu, Zhenping Guan, Zhenping Guan, } "Impurity process in ZnCdSe/ZnSe multiple quantum wells", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300718; https://doi.org/10.1117/12.300718
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