20 February 1998 Intersubband energies of two-dimensional electron gases in GaAs/AlGaAs heterojunction determined by resonant subband-Landau-level coupling
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300712
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Cyclotron resonance (CR) of two-dimensional electron gases (2DEG) in GaAs/AlGaAs heterojunction was studied by the gate voltage ratio spectrum measurement technique. The oscillation behaviors of the intensity of the CR peaks, the electron effective mass, scattering time and mobility obtained by fitting the CR line shape with the magnetic field due to the resonant subband Landau level coupling (RSLC) were observed. Several intersubband energies with high quantum index were measured by this RSLC method at different gate voltage. The results are in good agreement with the self-consistent calculations including the depolarization shift and the exciton effect correction.
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Zhanghai Chen, Zhanghai Chen, Canming Hu, Canming Hu, Pulin Liu, Pulin Liu, Guo Liang Shi, Guo Liang Shi, Xue Chu Shen, Xue Chu Shen, } "Intersubband energies of two-dimensional electron gases in GaAs/AlGaAs heterojunction determined by resonant subband-Landau-level coupling", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300712; https://doi.org/10.1117/12.300712
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