20 February 1998 MBE technology and semiconductor laser material growth
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998); doi: 10.1117/12.300715
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
This paper summarizes the technical characteristics and performance of our newly purchased VG V80H MBE system. Our research work on thin film semiconductor laser materials growth on this system has also been presented here, with some discussion on beam flux stability and growth uniformity et al.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guo-Jun Liu, Qianyong Zhang, Han Yang, Xingde Zhang, Xueqian Li, Yi Qu, Xiaowei Song, Xiaohua Wang, "MBE technology and semiconductor laser material growth", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300715; https://doi.org/10.1117/12.300715
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KEYWORDS
Semiconductor lasers

Laser applications

Thin films

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