20 February 1998 Oxidized characteristics of hydrogenated nanocrystalline silicon
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300728
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
The hydrogenated nano-crystalline silicon (nc-Si:H) films are prepared using conventional plasma enhanced chemical-vapor- deposition (PECVD) system and oxidized by plasma and high- temperature treatment which all doped oxygen into nc-Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photo-luminescence (PL) spectra are measured. The PL peak wavelengths blue-shift from 695 nm to 660 nm at 77 K, but there are still no obvious visible PL at room-temperature through oxidized post-processing. The bonded forms of oxygen in nc-Si:H are changed with different oxidized way and their influence on PL spectra are also investigated.
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Ming Liu, Ming Liu, Hongfei Dou, Hongfei Dou, Yuliang L. He, Yuliang L. He, Xinliu Jiang, Xinliu Jiang, } "Oxidized characteristics of hydrogenated nanocrystalline silicon", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300728; https://doi.org/10.1117/12.300728
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