20 February 1998 Phosphorous-doped hydrogenated nanocrystalline silicon film prepared by PECVD
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300678
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Phosphorous-doped nano-crystalline silicon films have been prepared by plasma enhanced chemical vapor deposition (PECVD) system. Detailed results on dark electrical conductivity, Raman spectra, infrared absorption spectra, hydrogen content are presented. The doped sample's grain size and its volume fraction is little related to doped concentration, whereas, the room-temperature conductivity of doped samples changed as doped concentration increased from 10-4 - 10-1; its value can reach to maximum value of 3.57 (Omega) -1 cm-1 when PH3/SiH4 equals 2 X 10-2. The conductivity activation energy of doped sample is smaller than that of undoped nc-Si:H film and hydrogen content is about 10 - 15%, also smaller than that of nc-Si:H film.
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Ming Liu, Ming Liu, Ziou Wang, Ziou Wang, Ying Cai Pang, Ying Cai Pang, Yuliang L. He, Yuliang L. He, Xinliu Jiang, Xinliu Jiang, } "Phosphorous-doped hydrogenated nanocrystalline silicon film prepared by PECVD", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300678; https://doi.org/10.1117/12.300678
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