20 February 1998 Preparation and physical properties of MoO3 thin films
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300703
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Thin films of MoO3 were prepared by electron beam evaporation technique. The films were deposited onto glass substrates maintained at temperatures in the range 100 - 250 degrees Celsius. The films were characterized by studying their structure, electrical and optical properties. The films formed at 100 degrees Celsius are amorphous with conductivity of about 2.5 X 10-5 (Omega) -1 cm-1. The effect of deposition temperature on the properties of the films were studied and discussed.
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Muhammad Yahaya, M. M. Salleh, Ibrahim A. Talib, Norkamisah Mohd Nor, "Preparation and physical properties of MoO3 thin films", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300703; https://doi.org/10.1117/12.300703
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