20 February 1998 Quality Hg1-xCdxTe films grown by the modified melt-etch liquid phase epitaxy method
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300702
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Biao Li, Biao Li, Yongsheng Gui, Yongsheng Gui, J. Q. Zhu, J. Q. Zhu, Junhao Chu, Junhao Chu, } "Quality Hg1-xCdxTe films grown by the modified melt-etch liquid phase epitaxy method", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300702; https://doi.org/10.1117/12.300702
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT


Back to Top