Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors

Shuechu Shen; Xiaoshuang Chen; Wayne Wei Lu; Mingfang Wan; Xingquan Liu

doi:10.1117/12.300637

20 February 1998 Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors

Shuechu Shen, Xiaoshuang Chen, Wayne Wei Lu, Mingfang Wan, Xingquan Liu

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300637
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

A comprehensive and spectroscopic investigation, including absorption (AB), photoluminescence (PL) and photoreflectance (PR) experiments on the electronic states and their optical transitions in some near-surface and surface quantum well structures of semiconductors are performed and reported here in this paper. The strain relaxation as a function of capping layer, the electronic states on the surface quantum well and the dependence of transition related surface Si (delta) doping on doping concentration.

Citation Download Citation

Shuechu Shen, Xiaoshuang Chen, Wayne Wei Lu, Mingfang Wan, and Xingquan Liu "Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300637

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