20 February 1998 Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300637
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
A comprehensive and spectroscopic investigation, including absorption (AB), photoluminescence (PL) and photoreflectance (PR) experiments on the electronic states and their optical transitions in some near-surface and surface quantum well structures of semiconductors are performed and reported here in this paper. The strain relaxation as a function of capping layer, the electronic states on the surface quantum well and the dependence of transition related surface Si (delta) doping on doping concentration.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuechu Shen, Xiaoshuang Chen, Wayne Wei Lu, Mingfang Wan, and Xingquan Liu "Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300637; https://doi.org/10.1117/12.300637
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