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20 February 1998 Stimulated emission under photopumping in ZnSe-based MQWs grown by AP-MOCVD
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300672
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Blue-green and blue stimulated emission under photopumping in Zn0.8Cd0.2Se-ZnSe and ZnSe-ZnS multiple quantum wells (MQWs) on (100) GaAs substrate grown by atmospheric pressure metalorganic chemical vapor deposition (AP-MOCVD) have been investigated, respectively. For the Zn0.8Cd0.2Se-ZnSe MQWs, the stimulated emission of the sample with different cavity length is observed at 77K, two groups of stimulated emission lines observed are attributed to n equals 1 heavy- hole (hh) and light-hole (lh) exciton transition, respectively, and it is noticed that the sample with the shorter Fabry-Perot cavity length has the larger threshold excitation and more mode spacing. For the ZnSe-ZnS MQWs, the blue stimulated emission is observed and attributed to the exciton-exciton interactions.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiwu Fan, Z. P. Guan, De Zen Shen, Jiying Zhang, Zhuhong Zheng, and Baojun Yang "Stimulated emission under photopumping in ZnSe-based MQWs grown by AP-MOCVD", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300672
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