Sensitization of the Ho3+ luminescence by Tm3+ or Cr4+ in Ca2Al2SiO8 crystals

Bruno Viana; N. Britos; O. Guillot-Noel; A. M. Lejus; D. Vivien

doi:10.1117/12.293439

1 November 1997 Sensitization of the Ho³⁺ luminescence by Tm³⁺ or Cr⁴⁺ in Ca₂Al₂SiO₈ crystals

Bruno Viana, N. Britos, O. Guillot-Noel, A. M. Lejus, D. Vivien

Proceedings Volume 3176, Tunable Solid State Lasers; (1997) https://doi.org/10.1117/12.293439
Event: Tunable Solid State Lasers, 1996, Wroclaw, Poland

Abstract

Ho₃₊ ions emitting in the near IR range, can be sensitized either by Tm³⁺ or by Cr⁴⁺ ions, as energy resonances between these ions are possible. In the Cs₂Al₂SiO₇ (CAS) host, the shortest distance between two RI³⁺ cations is 3.56 angstrom while this distance could be reduced to 3.14 angstrom when Cr⁴⁺ and RE³⁺ ions are considered. In this study, the materials are prepared in the form of small single crystal by the melting zone process in order to perform spectroscopic investigation. In the CAS host, the energy transfer processes are in competition with the very efficient non radiative multiphonon relaxation. Strong Tm yields Ho energy transfer enhanced the Ho³⁺ near IR emission around 2 micrometers while the Ho yields Tm back transfer probability is quite low. For Cr⁴⁺:CAS, due to a strong electron-phonon coupling, Cr⁴⁺ emission suffers from strong thermal quenching and almost vanished at room temperature. In the Cr⁴⁺:RE³⁺:Ca₂Al₂SiO₇ crystals, interactions between Cr⁴⁺ and Er³⁺, Ho³⁺ or Tm³⁺ occur and lifetime measurements are used to quantify the energy transfers probabilities.

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Bruno Viana, N. Britos, O. Guillot-Noel, A. M. Lejus, and D. Vivien "Sensitization of the Ho³⁺ luminescence by Tm³⁺ or Cr⁴⁺ in Ca₂Al₂SiO₈ crystals", Proc. SPIE 3176, Tunable Solid State Lasers, (1 November 1997); https://doi.org/10.1117/12.293439

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