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14 July 1997 Electrical and optical studies of NTD GaAs crystals
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Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280742
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
The electrical properties and photoluminescence spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) have been investigated as function of starting material properties, irradiation dose and thermal to fast neutron fluence ratio. The residual carbon acceptors interact with radiation induced defects (RD) in neutron irradiated GaAs crystals and form nonradiative recombination centers, which are stable up to 700 degrees Celsius.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Strzelecka, Andrzej Hruban, M. Gladysz, E. Jurkiewicz Wegner, W. Orlowski, B. Surma, M. Piersa, A. Gladki, and A. Mirowska "Electrical and optical studies of NTD GaAs crystals", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); https://doi.org/10.1117/12.280742
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