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14 July 1997 Gamma-induced effect of recharging: Ce4+--Ce3+ in Ce3+ and Nd3+ doped YAG crystals
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Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280752
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Gamma-induced transition of Ce4+ $ARLR Ce3+ was investigated for Ce,Nd:YAG samples cut off from the same crystal and differing one to another by a few tenth percent of Ce3+ ions concentration (starting concentration). Depending on the starting concentration changes of resulting concentration of Ce3+ ions were observed. The luminescence of Ce,Nd:YAG crystal at about 530 nm increased independently on Ce3+ starting concentration.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Slawomir Maksymilian Kaczmarek, Miroslaw Kwasny, Jaroslaw Kisielewski, Zbigniew Moroz, Andrej O. Matkovskii, and Dmitry Yu. Sugak "Gamma-induced effect of recharging: Ce4+--Ce3+ in Ce3+ and Nd3+ doped YAG crystals", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); https://doi.org/10.1117/12.280752
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