14 July 1997 Influence of bismuth oxide purity and growth conditions on properties of photoexcited charge carriers in sillenite-structure crystals
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Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280730
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Influence of bismuth oxide purity and growth conditions on photorefractive properties of sillenite structure materials has been analyzed. Various impurities present in starting materials affect significantly on photoexcited charge carriers in sillenites. Small concentrations of chromium (approximately 10-4 wt.%) in Bi12TiO20 crystals decreases the diffusion length Ld of photoinduced charge carriers. Cr- doped BTO crystals were found to be sensitive in near IR region due to 'tails' in their absorption spectrum. Sillenite structure crystals grown in an oxygen-free atmosphere contain lower concentration of acceptor centers and demonstrate higher photoconductivity.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elena V. Mokrushina, Elena V. Mokrushina, Yu. B. Afanasiev, Yu. B. Afanasiev, A. A. Nechitailov, A. A. Nechitailov, A. A. Petrov, A. A. Petrov, Victor V. Prokofiev, Victor V. Prokofiev, } "Influence of bismuth oxide purity and growth conditions on properties of photoexcited charge carriers in sillenite-structure crystals", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280730; https://doi.org/10.1117/12.280730
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