Investigation of As-precipitates in Si GaAs

S. Strzelecka; Marta Pawlowska; Andrzej Hruban; M. Gladysz; E. Jurkiewicz Wegner; A. Gladki; W. Orlowski

doi:10.1117/12.280741

14 July 1997 Investigation of As-precipitates in Si GaAs

S. Strzelecka, Marta Pawlowska, Andrzej Hruban, M. Gladysz, E. Jurkiewicz Wegner, A. Gladki, W. Orlowski

Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280741
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

The influence of thermal annealing procedure on As- precipitates density and electrical properties was investigated. Undoped and Cr, V, O₂, and In doped GaAs single crystals grown by liquid encapsulated Czochralski method were analyzed. As-precipitates were investigated by optical microscope with Nomarski contrast after AB solution etching (AB-EPD), by laser scattering tomography (LST), by cathodoluminescence (CL) and transmission electron microscope (TEM). Annealing processes for ingots and wafers were carried out in closed quartz ampules at different temperature, time and arsenic partial pressure. The influence of thermal annealing on As-precipitates density was observed depending on starting materials properties and process parameters. The best results on reduction of As-precipitates density and homogenization of electrical properties of the material were obtained by multiannealing procedure.

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S. Strzelecka, Marta Pawlowska, Andrzej Hruban, M. Gladysz, E. Jurkiewicz Wegner, A. Gladki, and W. Orlowski "Investigation of As-precipitates in Si GaAs", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); https://doi.org/10.1117/12.280741

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