14 July 1997 Uniform stress effect on initial stages of oxygen precipitation in Czochralski-grown silicon
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Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280740
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Uniform stress effect on initial stages of oxygen precipitation in Cz-Si annealed at (870 - 1000) K under argon pressure, HP, up to 109 Pa was investigated by FTIR, x- ray, selective etching and electrical methods. Cz-Si samples subjected to nucleation treatment were subsequently annealed at (1230 - 1400) K - 105 Pa to check an effect of nucleation under HP on oxygen precipitation. Enhanced HP during nucleation influences kinetics of thermal donor creation, enlarges oxygen precipitation and concentration of oxygen-related defects. HP-induced phenomena are discussed in terms of decreased oxygen diffusion and of enhanced misfit at oxygen cluster/Si matrix boundary with activation of 'additional' nucleation centers for oxygen precipitation.
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Andrzej Misiuk, Andrzej Misiuk, } "Uniform stress effect on initial stages of oxygen precipitation in Czochralski-grown silicon", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280740; https://doi.org/10.1117/12.280740
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