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13 June 1997 Detection of oxygen in porous silicon by nuclear reaction 16O(alpha,alpha)16O
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276196
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Elastic Recoil Detection and Rutherford Backscattering methods were used to obtain the depth profiles of hydrogen, oxygen and silicon atoms in porous Si layers on Si substrates. Large values of the oxygen concentration suggest a high oxidation degree of the specific surface of porous Si. It supports our earlier hypothesis, based on experimental evidence, that a formation of silicon oxidation oxides in porous layers is essential to the blue emission of light from this material.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miroslaw Kulik, J. Zuk, H. Krzyzanowska, T. J. Ochalski, and A. P. Kobzev "Detection of oxygen in porous silicon by nuclear reaction 16O(alpha,alpha)16O", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276196
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