13 June 1997 GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276212
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
We have measured the photoreflectance (PR) spectra at room and liquid nitrogen temperatures of two MBE grown GaAs/AlGaAs structures. The first one is HEMT type system with buried 10 periods of 2.5 micrometers GaAs/2.5nm AlGaAs superlattice. Oscillations-like signal associated with this SL have been observed and detailed analyzed. The second investigated structure is the sequence of 10 different quantum wells. Transitions in almost all wells and those associated with above barrier states have been observed. The experimental transitions are well described in terms of envelope function model.
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G. Sek, G. Sek, Jan Misiewicz, Jan Misiewicz, Maria Kaniewska, Maria Kaniewska, Kazimierz Reginski, Kazimierz Reginski, Jan Muszalski, Jan Muszalski, } "GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276212; https://doi.org/10.1117/12.276212
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