13 June 1997 InAsSb heterojunction photodiodes grown by liquid phase epitaxy
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276232
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
In this paper, the growth of p-n InAsSb/InSb heterojunction using liquid phase epitaxy (LPE) has been discussed. The layers have been grown on B InSb substrate using an In-rich solution in horizontal slider type boat. The active InAsSb layer was first grown with a desired composition. The carrier concentrations in the top layer in the range 1016 cm-3 to 1020 cm-3 was easily controlled using Cd doping. The standard structure consisted of 100 micrometers heavily doped n-type InSb substrate, an 10 micrometers InAsSb active region, and 2 micrometers heavily doped InSb p-type cap layer. Mirror like surface morphology was observed using a Nomarski differential interference contrast microscope. The structural characterization and the composition of InAsSb have been determined from x-ray diffraction data and IR transmission characteristic. The technology and construction of mesa photodiodes, both backside and frontside illuminated, have been presented. The analyses of the R0A product and current-voltage characteristics as a function of temperature shows that the dark currents of InSb/InSb photodiodes are diffusion limited. At higher As composition the R0A product is affected by the generation-recombination current of the depletion region.
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Jaroslaw Rutkowski, Jaroslaw Rutkowski, Jolanta Raczynska, Jolanta Raczynska, Antoni Rogalski, Antoni Rogalski, Krzysztof Adamiec, Krzysztof Adamiec, Waldemar Larkowski, Waldemar Larkowski, } "InAsSb heterojunction photodiodes grown by liquid phase epitaxy", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276232; https://doi.org/10.1117/12.276232
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