Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling

Michal Janusz Malachowski; Antoni Rogalski

doi:10.1117/12.276231

13 June 1997 Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling

Michal Janusz Malachowski, Antoni Rogalski

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276231
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

In the paper, for the first time, the minority carrier diffusion lengths in a n-on-p and p-on-n GaN photodiodes have been estimated. The estimation procedure has consisted in adjustment of theoretically predicted spectral responsivity of GaN photodiodes to experimentally measured responsivity presented by Q. Chen et al. It has been found that due to the strong absorption of UV radiation in GaN material, the depleted region and the backside layer of the p-n junction have a minor for electrons in the p-type region and holes in n-type region, respectively.

Citation Download Citation

Michal Janusz Malachowski and Antoni Rogalski "Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276231

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