13 June 1997 Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276233
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
The present high quality HgCdTe photodetectors are based on heterostructures with complicated band gap and doping profiles. Such structures can be obtained by combination of Isothermal Vapor Phase Epitaxy (ISO VPE) and RDF sputtering of CdTe. Cadmium Telluride exhibits unique properties - transparency to IR light, low conductivity, nearly lattice match and chemically compatibility to HgCdTe. Thus, low defect densities and hence low surface state density at the CdTe/HgCdTe interface are expected, which in turn lead to low surface recombination velocities and long effective lifetimes. The immediate use of CdTe epilayer is passivation of HgCdTe. High quality layers HgCdTe have been grown on CdTe substrates by open tube ISO VPE. CdTe layers have been obtained by RF magnetron sputtering on to previously deposited HgCdTe layers in 400 LS Leybold AG System. The substrate temperature can be varied form 20 to 90 degrees C. Thermal treatment has been performed in Hg/H2 atmosphere in reusable chamber at temperatures 200-400 degrees C. The resulting heterostructures have been characterized by visual microscopy with Nomarski contrast, Hall measurements and IR transmittance. This technic and photolithography has been extensively used for successful fabrication of heterojunction contact photoresistors and heterostructure photodiodes.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Krzysztof Adamiec, Krzysztof Adamiec, Waldemar Gawron, Waldemar Gawron, Jozef Piotrowski, Jozef Piotrowski, } "Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276233; https://doi.org/10.1117/12.276233


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