13 June 1997 Isotype heterojunction in HgCdTe photodiodes
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276230
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Results of a study of the optical and electrical performance of P-on-n HgCdTe photodiode configuration are presented. The effect of doping profile and heterostructure contacts with wide gap region on the photodiode parameters is solved by forward-condition steady-state analysis. An isotype heterojunction, a high/low junction or very heavily doped high quality p-type material is required to achieve competitive performance from this device architecture in the diffusion limited temperature regime. It is shown that the isotype heterojunctions have the advantages over a high/low homojunctions for IR detectors. The wide gap region has low thermal generation rates of carriers and it also isolates the active region of the device from carrier generation at the contacts. Results obtained from computer simulations were found to be in qualitative agreement with previous experimental data on HgCdTe photodiodes.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaroslaw Rutkowski, Jaroslaw Rutkowski, Alina Jozwikowska, Alina Jozwikowska, } "Isotype heterojunction in HgCdTe photodiodes", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276230; https://doi.org/10.1117/12.276230
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