13 June 1997 Laser scanning tomograph as the tool for investigation of semiconductor materials
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276218
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
IR laser light scattering phenomena allows to visualize inhomogeneities in the bulk semiconductor materials. A device for observation of IR scattering in semiconductor wafers - the laser scanning tomograph (LST) - was designed and manufactured in the Institute of Applied Optics. A sample is illuminated by the diode pumped Nd:YAG laser, emitting the IR laser light in TEMoo mode. The laser beam diameter inside the semiconductor samples does not exceed 50 micrometers . The scattering centers inside the sample are observed perpendicularly to the direction of illuminating beam, using microscope with an IR CCD camera. To obtain a 2D image of scanned plane, the sample is moved horizontally by a scanning stage. The system has also a moving stage that allows to move the sample vertically. This enables the sample investigation in the third direction. The LST is controlled by a PC computer equipped with a user friendly software. The measurements results of GaAs wafers are presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacek Galas, Marek Daszkiewicz, Tomasz Kozlowski, Narcyz Blocki, "Laser scanning tomograph as the tool for investigation of semiconductor materials", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276218; https://doi.org/10.1117/12.276218
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