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13 June 1997 Lithographic properties of perylenetetracarboxylic acid derivative films
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276204
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Vacuum vapor deposited films of perylene-3,4,9,10- tetracarboxylic acid diimide derivatives (DPTA) permit to produce masks by laser vacuum projection lithography technique. The masks have submicron elements and plasma chemical etching (PCE) selectivity ranging from 7 to 15 during PCE of Si, SiO2 and Al. Ion-beam sputtering (IBS) selectivity of the DPTA masks during IBS of Cu, Al, GaAs, alloys CdxHg1-xTe and YBa2Cu3O7-x by Ar+ ions with the energy of 700 eV were changed from 1.2 to 23.3. The influence of chemical structure of the compounds investigated on film IBS rate was discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor Adamovich Azarko, E. V. Scharendo, Vladimir Enokovich Agabekov, V. E. Obuchov, and Eduard I. Tochitsky "Lithographic properties of perylenetetracarboxylic acid derivative films", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276204
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