13 June 1997 Observation of the new lines in photoluminescence from MOCVD-grown GaAs
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276211
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
The photoluminescence (PL) spectra of MOCVD-grown GaAs samples have been measured at 10K, and for the most representative sample, PL spectra were recorded from 10 to 150K. Besides of the well-established transitions, a hitherto unreported peak was seen at 1.454 eV. The identification of a line at 1.408 eV is discussed.
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Mariusz Ciorga, Mariusz Ciorga, Jan Misiewicz, Jan Misiewicz, Marek J. Tlaczala, Marek J. Tlaczala, Marek Panek, Marek Panek, Erling Veje, Erling Veje, } "Observation of the new lines in photoluminescence from MOCVD-grown GaAs", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276211; https://doi.org/10.1117/12.276211
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