13 June 1997 Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity, and photomagnetoelectric responses
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276214
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Cleaved films of crystalline GaSe of thickness from 1500 nm to 5000 nm were investigated using optical transmittance, reflectance, photoconductivity (PC) and photoelectromagnetic effect. The investigations were performed, at room temperature for different illumination intensities and wavelengths. The oscillatory behavior of the measured spectral dependence is due to interference of radiation internally reflected in the samples were registered. The least square fitting of the experimental results with theoretical formulae allowed to determine the spectral dependencies of the real part of refractive index and absorption coefficient of radiation as well as the power coefficient in the power law dependence of PC on illumination intensity. The necessity of new theoretical description of he investigated effects is proposed.
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M. Kepinska, M. Kepinska, Marian Nowak, Marian Nowak, } "Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity, and photomagnetoelectric responses", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276214; https://doi.org/10.1117/12.276214
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