13 June 1997 Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276208
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Thick intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent were studied by photoluminescence at temperature T equals 2K. The dependence of photoluminescence spectra on contents of Bi in solution was analyzed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mariusz Ciorga, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Marek Panek, Bogdan Paszkiewicz, Marek J. Tlaczala, "Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276208; https://doi.org/10.1117/12.276208
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