13 June 1997 Photoreflectance spectroscopy for investigations of semiconductor structures
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276207
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Photoreflectance spectroscopy as the nondestructive, contactless, room temperature method to investigate semiconductor layers, interfaces, structures and devices is presented. Principles of the method are described. Application to the investigations of the III-V and II-VI compounds structures, including quantum wells, heterojunction bipolar transistors, high electron mobility transistors, vertical cavity surface emitting lasers and quantum dots arrays are shown.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Misiewicz, Jan Misiewicz, } "Photoreflectance spectroscopy for investigations of semiconductor structures", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276207; https://doi.org/10.1117/12.276207
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