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13 June 1997 Photovoltaic effects from nano- and microstructured Si
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997)
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Photovoltaic effects from porous silicon (PS) based devices fabricated with electro-chemical etching processes have been investigated. Contact to the PS were made by bonding a small region of Al on a semi-transparent Au film. The structure of the uncoated porous layers were studied by SEM. Two levels of porosity were observed in n-type UV- and VIS-PS, surface etched features a few nanometers in diameter and macropores running deep in the bulk Si. Only nanopores were seen in p- type PS. The photovoltaic effects from the combination of the Au/porous Si junction and the PS/bulk Si heterojunction were observed under white-light of different intensity. The I-V characteristics of several PS based photovoltaic devices have been measured using a calibrated source. Photovoltages of the differently prepared n-type VIS-PS devices have been measured as a function of excitation energy. The polarities of photovoltage for both types of devices were found to be the same. P-type devices shows different I-V characteristics, depending on anodization current, all n- type PV devices present similar I-V characteristics.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Unal, Sue C. Bayliss, and P. J. Harris "Photovoltaic effects from nano- and microstructured Si", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997);


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