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13 June 1997 PtSi Schottky-barrier infrared FPAs with CDS readout
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997)
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
High performance PtSi Schottky-barrier focal plane arrays (SB FPAs) have been developed for thermal imaging by using a process technology fully compatible with silicon VLSI and an original readout architecture called Charge Sweep Device (CSD). Eliminating limitations of the conventional interline transfer CCD readout architecture, the CSD readout architecture makes it possible to design small pixels with high fill factors and large saturation levels. Thanks to a high fill factor of 71 percent and a large saturation level of 2.9 X 106 electrons, a 512 X 512 element SB CSD FPA with a 26 X 20 micrometers 2 pixel size has achieved a very low noise equivalent temperature difference of 0.033 K at 300 K with f/1.2 optics and a 30 Hz frame rate. A high- resolution SB CSD FPA with 1040 X 1040 pixels has also been developed. This high-resolution FPA produces HDTV- quality IR images at the standard TV frame rate. IR cameras with these FPAs have been used and proved to be useful for a wide variety of applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masafumi Kimata, Tatsuo Ozeki, Masahiro Nunoshita, and Sho Ito "PtSi Schottky-barrier infrared FPAs with CDS readout", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997);


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