X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures

Peter Zaumseil; G. G. Fischer; Andrzej Misiuk

doi:10.1117/12.276220

13 June 1997 X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures

Peter Zaumseil, G. G. Fischer, Andrzej Misiuk

Author Affiliations +

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276220
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

The influence of hydrostatic pressure on the relaxation behavior of pseudomorphic Si_1-xGe_x samples were treated under high hydrostatic pressures at room temperature as well as at high temperature (900 degrees C and 950 degrees C). Annealing under high pressure causes both a strong increase of relaxation and a strong enhancement of the Ge-Si-interdiffusion with increasing pressure relative to annealing experiments under atmospheric conditions. The activation volume of the Ge/Si interdiffusion process is estimated.

Citation Download Citation

Peter Zaumseil, G. G. Fischer, and Andrzej Misiuk "X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276220

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