13 June 1997 X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276220
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
The influence of hydrostatic pressure on the relaxation behavior of pseudomorphic Si1-xGex samples were treated under high hydrostatic pressures at room temperature as well as at high temperature (900 degrees C and 950 degrees C). Annealing under high pressure causes both a strong increase of relaxation and a strong enhancement of the Ge-Si-interdiffusion with increasing pressure relative to annealing experiments under atmospheric conditions. The activation volume of the Ge/Si interdiffusion process is estimated.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Zaumseil, Peter Zaumseil, G. G. Fischer, G. G. Fischer, Andrzej Misiuk, Andrzej Misiuk, "X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276220; https://doi.org/10.1117/12.276220
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