13 June 1997 Influence of modified hopping center distribution in the near-contact regions on time-of-flight transient currents
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Proceedings Volume 3181, Dielectric and Related Phenomena: Materials Physico-Chemistry, Spectrometric Investigations, and Applications; (1997) https://doi.org/10.1117/12.276257
Event: Dielectric and Related Phenomena: Materials Physico-Chemistry, Spectrometric Investigations, and Applications, 1996, Szczyrk, Poland
Abstract
The influence of the near contact non-uniformities in thin dielectric layers on the time-of-flight current profiles has been investigated using Monte Carlo method in systems revealing the hopping transport mechanism. In particular, the following model cases are studied: (1) enhanced or reduced hopping centers density in the near-contacts regions, and (2) wider or narrower centers distribution in energy. The simulations have been performed for various defects total concentrations, various defects distributions in energy, and various spatial extensions of the near- contact regions of enhanced/lowered centers concentrations. It has been shown that even relatively small differences in the hopping center parameters can change dramatically the measured currents, so that the overall current shape can be determined by the properties of the near-contact region. The layers with modified center distribution near only one of the contacts show remarkable polarity dependence and, in general, the near-injecting-contact region effects the current shape then the near-collecting-contact region.
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Jaroslaw Rybicki, Jaroslaw Rybicki, } "Influence of modified hopping center distribution in the near-contact regions on time-of-flight transient currents", Proc. SPIE 3181, Dielectric and Related Phenomena: Materials Physico-Chemistry, Spectrometric Investigations, and Applications, (13 June 1997); doi: 10.1117/12.276257; https://doi.org/10.1117/12.276257
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