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26 August 1997 Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors
Volodymyr G. Savitsky, Bogdan S. Sokolovsky, Alexey V. Nemolovsky
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280448
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Characteristic features of the photoelectric amplification of graded-band-gap photoresistors which energy gap is increased linearly towards contacts are considered theoretically. It has been shown that nonmonotonic field dependence of the photoelectric amplification coefficient is realized in such photoresistors. Maximum value the photoelectric amplification coefficient being increased under the increase of energy gap gradient can be much greater than that of the homogeneous samples.
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Volodymyr G. Savitsky, Bogdan S. Sokolovsky, and Alexey V. Nemolovsky "Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280448
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Photoresistors
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