Paper
26 August 1997 Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x~0.2 to 0.3) by EBIC method
Jan Franc, Eduard Belas, Roman Grill, A. L. Toth, Helmut Sitter, Pavel Moravec, Pavel Hoeschl
Author Affiliations +
Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280429
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Diffusion lengths of minority electrons and holes in Hg1-xCdxTe single crystals produced by the diffusion controlled Bridgman growth from melt of constant composition were studied. Bulk p-HgCdTe samples were etched by low energy Ar ions in the VEECO ion etching system or in Ar plasma in a plasma etching reactor. As a result of this treatment a deep p-n junction was created in the samples. Secondary-electron and electron beam induced current images were used to determine the position of the p-n junction. The obtained EBIC data were then sued for evaluation of a set of minority carrier diffusion lengths at temperatures 140-270 K.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Franc, Eduard Belas, Roman Grill, A. L. Toth, Helmut Sitter, Pavel Moravec, and Pavel Hoeschl "Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x~0.2 to 0.3) by EBIC method", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280429
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KEYWORDS
Diffusion

Argon

Ions

Cadmium

Crystals

Electrons

Etching

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