26 August 1997 Electronic component design and testing for multielement IR arrays with CCD readout devices
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280411
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
P-channel silicon direct injection read-out devices with p- type buried channel CD multiplexers which consist of input circuits, shift register and output circuits were designed, fabricated and tested. Read-out devices were designed for using with IR p-n-photodiode linear arrays. The dynamical range of p-type read-out devices was estimated to be of the order of 60 dB at T equals 80 K. The two-phase p-channel CCD shift register was designed with 5 MHz clock frequency operation. Transfer efficiency without fat zero was 0.99985 at 1.0 MHz.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey D. Darchuk, Sergey D. Darchuk, Yurii P. Derkach, Yurii P. Derkach, Yu. G. Kononenko, Yu. G. Kononenko, Vladimir P. Reva, Vladimir P. Reva, Fiodor F. Sizov, Fiodor F. Sizov, Vladimir V. Tetyorkin, Vladimir V. Tetyorkin, } "Electronic component design and testing for multielement IR arrays with CCD readout devices", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280411; https://doi.org/10.1117/12.280411
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