26 August 1997 Ge vapor-phase doping of CdTe and Cd0.96Zn0.04Te crystals
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280464
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
The diffusion and solubility of Ge in CdTe and Cd0.96 Zn0.04 Te crystals at near saturated cadmium vapor pressure at 838 - 1108 K has been studied by radiometric and optical methods The influence of thermal etching process on Ge diffusion rate are discussed. The result suggest that local stress field in II-VI crystals are the sites where migrating Ge had been concentrated in separate phase form.
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P. Feichuk, L. Shcherbak, I. Omanchukivska, "Ge vapor-phase doping of CdTe and Cd0.96Zn0.04Te crystals", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280464; https://doi.org/10.1117/12.280464
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