26 August 1997 High-power pulse-electron beam modification and ion implantation of Hg1-xCdxTe epitaxial structures
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280460
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Hg1-xCdxTe(MCT) samples epitaxial structures are irradiated by pulse electron beams under the doze 1013- 1017 cm-2. Electron beams have the next parameters: 500 eV energy electron ; 200 keV energy electron. Electroconductivity and recombination of modified samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation.FOr 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial p-type crystals due to the conductivity compensation. MCT samples are implanted by Al ions under the dose 1012-1016 cm-2. Ion beams have the next parameters: (1-10) A/cm2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion. The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.
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Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, Yu. A. Denisov, D. A. Oucherenko, Gennady E. Remnev, Mikhail S. Opekunov, "High-power pulse-electron beam modification and ion implantation of Hg1-xCdxTe epitaxial structures", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280460; https://doi.org/10.1117/12.280460
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