26 August 1997 Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280422
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Epitaxial MnxHg1-xTe layers grown by the liquid phase method at temperatures 848K and 793K are investigated. Due to diffusion of Cd from substrate Cd0.96Zn0.04Te obtained layers are four-component. Results of conductivity and Hall measurements show that the graded-gap layer gives noticeable contribution to the transport characteristics.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander E. Belyaev, S. A. Vitusevich, Sergiy Mikhailovich Komirenko, "Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280422; https://doi.org/10.1117/12.280422
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