26 August 1997 Influence of laser irradiation on Hg1-xMnxTe photoelectrical properties
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997); doi: 10.1117/12.280455
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
We have carried out experimental investigation of spectral and temperature dependences of photoconductivity in n-type Hg1-xMnxTe and studied an influence of nanosecond pulses of ruby laser irradiation on such properties. It has been shown that irradiation of the samples with subthreshold energy densities does not cause a change of their photosensitivity and leads to the surface refining from impurity atoms and oxides. A laser treatment of the samples with energy densities E > Eth stimulates a rise of the defect number in the crystals that causes a change of the lifetime characteristics and photosensitivity lowering.
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Elena P. Kopishinskaya, Peter E. Mozol', I. M. Rarenko, Aleksandr I. Vlasenko, "Influence of laser irradiation on Hg1-xMnxTe photoelectrical properties", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280455; https://doi.org/10.1117/12.280455
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KEYWORDS
Laser irradiation

Chemical species

Crystals

Laser crystals

Laser therapeutics

Manganese

Mercury

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