Injection-amplification IR-photodiodes

Shamil D. Kurmashev; Vitaly I. Stafeev; I. Vikulin; Alexandr N. Sofronkov

doi:10.1117/12.280470

26 August 1997 Injection-amplification IR-photodiodes

Shamil D. Kurmashev, Vitaly I. Stafeev, I. Vikulin, Alexandr N. Sofronkov

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280470
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The results of the investigations of the injection photodiodes p-i-n structures, based on high-resistivity semiconductors, compensated by deep-level impurities, are presented. Mechanisms of the photoelectric injection amplification are discussed, which consists in the direct influence of light on the charge currier distribution parameters in the semiconductor volume. The diodes are shown to by sensitive in a broad spectral range. The integral sensitivity of photodetectors of this type is much higher than that of injectionless devices. The physical mechanism of the injection amplification of photocurrent in mercuri- compensated and indium antimonide under the effect of the middle IR-wavelength band electromagnetic radiation has been studied both theoretically and experimentally.

Citation Download Citation

Shamil D. Kurmashev, Vitaly I. Stafeev, I. Vikulin, and Alexandr N. Sofronkov "Injection-amplification IR-photodiodes", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280470

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