26 August 1997 Injection-amplification IR-photodiodes
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280470
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
The results of the investigations of the injection photodiodes p-i-n structures, based on high-resistivity semiconductors, compensated by deep-level impurities, are presented. Mechanisms of the photoelectric injection amplification are discussed, which consists in the direct influence of light on the charge currier distribution parameters in the semiconductor volume. The diodes are shown to by sensitive in a broad spectral range. The integral sensitivity of photodetectors of this type is much higher than that of injectionless devices. The physical mechanism of the injection amplification of photocurrent in mercuri- compensated and indium antimonide under the effect of the middle IR-wavelength band electromagnetic radiation has been studied both theoretically and experimentally.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shamil D. Kurmashev, Shamil D. Kurmashev, Vitaly I. Stafeev, Vitaly I. Stafeev, I. Vikulin, I. Vikulin, Alexandr N. Sofronkov, Alexandr N. Sofronkov, } "Injection-amplification IR-photodiodes", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280470; https://doi.org/10.1117/12.280470
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