26 August 1997 Laser molecular beam epitaxy of BaTiO3 thin films
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280465
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Atomic-scale epitaxial BaTiO3 (BTO) thin films were grown on SrTiO3 (STO) substrate by computer-controlled laser molecular beam epitaxial system. The crystal quality, surface and interface microstructure of the laser MBE BTO thin film has been investigated by in-situ reflection high- energy electron diffraction, x-ray diffraction, transmission electron microscope and atomic force microscope. We find that the laser MBE BTO thin film prepared at ozone pressure of 10-6 Torr and at STO substrate temperature of 750 degrees C has highly c-axis oriented tetragonal phase and single crystal structure, the BTO/STO interface is abrupt, and the surface of the BTO thin film shows atomically smooth.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dafu Cui, Dafu Cui, Hui-sheng Wang, Hui-sheng Wang, K. Ma, K. Ma, Zhenghao Chen, Zhenghao Chen, Yueliang Zhou, Yueliang Zhou, Huibin Lu, Huibin Lu, Lijuan Li, Lijuan Li, Guozhen Yang, Guozhen Yang, } "Laser molecular beam epitaxy of BaTiO3 thin films", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280465; https://doi.org/10.1117/12.280465
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